document number: 89409 for technical ques tions within your region, please cont act one of the following: www.vishay.com reivision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount schottky barrier rectifier bys11-90 vishay general semiconductor new product features ? low profile package ? ideal for automated placement ? guardring for overvoltage protection ? low power losses, high efficiency ? very low switching losses ? high surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to ie c 61249-2-21 definition typical applications for use in high frequency inverters, switching power supplies, freewheeling diod es, oring diode, dc/dc converters and reverse battery protection. mechanical data case: do-214ac (sma) molding compound meets ul 94 v-0 flammabi lity rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 201 class 1a whisker test polarity: color band denotes the cathode end primary characteristics i f(av) 1.5 a v rrm 90 v i fsm 40 a v f 0.75 v t j max. 150 c do-214ac ( s ma) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit device marking code bys109 maximum repetitive peak reverse voltage v rrm 90 v maximum average forward rectified current i f(av) 1.5 a peak forward surge current single half sine-wave superimposed on rated load 8.3 ms i fsm 40 a 10 ms 30 voltage rate of change (rated v r ) dv/dt 10 000 v/s junction and storage temperature range t j , t stg - 55 to + 150 c
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89409 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com reivision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bys11-90 vishay general semiconductor new product note (1) pulse test: 300 s pulse width, 1 % duty cycle notes (1) mounted on epoxy-glass hard tissue (2) mounted on epoxy-glass hard tissue, 50 mm 2 35 m cu (3) mounted on al-oxide-ceramic (al 2 o 3 ), 50 mm 2 35 m cu ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - forward current vs. forward voltage fig. 2 - max. average forward current vs. ambient temperature electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol bys11-90 unit maximum instantaneous forward voltage 1.0 a v f (1) 750 mv maximum dc reverse current v rrm t j = 25 c i r (1) 100 a t j = 100 c 1 ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol bys11-90 unit maximum thermal resistan ce, junction to lead r ? jl 25 c/w maximum thermal resistance , junction to ambient r ? ja (1) 150 c/w r ? ja (2) 125 r ? ja (3) 100 ordering information (example) preferred p/n unit weight (g) preferred package code ba se quantity delivery mode bys11-90-m3/tr 0.064 tr 1800 7" di ameter plastic tape and reel bys11-90-m3/tr3 0.064 tr3 7500 13" di ameter plastic tape and reel 10 1 0.1 0.01 0.001 t j = 150 c t j = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 forward voltage (v) forward current (a) 0 40 80 120 160 200 2.0 1.6 1.2 0.8 0.4 0 v r = v rrm , half sine-wave, r thja = 25 k/w ambient temperature (c) average forward current (a)
document number: 89409 for technical ques tions within your region, please cont act one of the following: www.vishay.com reivision: 19-apr-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bys11-90 vishay general semiconductor new product fig. 3 - max. average forward current vs. ambient temperature fig. 4 - reverse current vs. junction temperature fig. 5 - max. reverse power diss ipation vs. juncti on temperature fig. 6 - diode capacitance vs. reverse voltage v r = 0 v, half sine-wave r thja = 25 k/w 100 k/w 125 k/w 150 k/w 0 40 80 120 160 200 2.0 1.6 1.2 0.8 0.4 0 ambient temperature (c) average forward cu rrent (a) v r = v rrm 0 40 80 120 160 200 1000 100 10 1 0.1 junction temperatu re (c) reverse current (ma) r thja = 25 k/w 100 k/w v r = v rrm 0 40 80 120 100 200 2.0 1.6 1.2 0.8 0.4 0 max. reverse power dissipation (w) junction temperature (c) f = 1 mhz 0.1 1 10 100 reverse voltage (v) 180 160 140 120 100 80 60 40 20 0 diode capacitance (pf)
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 89409 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com reivision: 19-apr-11 this document is subject to change without notice. the products described herein and this document ar e subject to specific disclaimers, set forth at www.vishay.com/doc?91000 bys11-90 vishay general semiconductor new product package outline dimensions in inches (millimeters) 0.008 (0.203) 0.194 (4.93) 0.208 (5.28) 0.157 (3.99) 0.177 (4.50) 0.100 (2.54) 0.110 (2.79) 0.078 (1.98) 0.090 (2.29) 0.006 (0.152) 0.012 (0.305) 0.049 (1.25) 0.065 (1.65) cathode band 0 (0) do-214ac ( s ma) mountin g pa d layout 0.074 (1.88) max. 0.208 (5.28) ref. 0.066 (1.68) min. 0.060 (1.52) min. 0.030 (0.76) 0.060 (1.52)
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